19 May 2006 Optical parameters analysis of a semi-conductive film based on genetic algorithm
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Abstract
For a semi-conductive thin film and substrate system, it is difficult to obtain the geometric thickness and optical constants directly from reflectance value, if the materials of interest have finite thickness, absorption and dispersion. To simplify this, the model of Forouhi-Bloomer (F-B) is adopted to express reflectance merely with wavelength and several parameters which have definite values. Then the genetic algorithm (GA) is introduced to optimize and fit these parameters on data of reflection index in detected wave ranges. By comparing with a traditional optimization method the fitting error of GA is smaller. Finally, a sample with a thin film of amorphous Si coated on a crystal Si is analyzed. Thus, a novel method is presented to characterize the optical property of the film coated on a semi-conductive substrate, merely basing on the reflection index data.
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Yu Ning, Jiarong Ji, Zongfu Jiang, Weimin Ye, Chen Zhao, "Optical parameters analysis of a semi-conductive film based on genetic algorithm", Proc. SPIE 6150, 2nd International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment, 615004 (19 May 2006); doi: 10.1117/12.677959; https://doi.org/10.1117/12.677959
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