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22 March 2006 EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers
Holger Seitz, Markus Renno, Thomas Leutbecher, Nathalie Olschewski, Torsten Reichardt, Ronny Walter, Helmut Popp, Günter Hess, Florian Letzkus, Jörg Butschke, Mathias Irmscher
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Proceedings Volume 6151, Emerging Lithographic Technologies X; 615109 (2006) https://doi.org/10.1117/12.655540
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States
Abstract
Continuous reduction of feature size in semiconductor industry and manufacturing integrated circuits at low costs requires new and innovative technology to overcome existing limitations of optics. Tremendous progress in key areas like EUVL light source technology and manufacturing technology of EUVL masks with low defect rates have been made recently and EUVL is the leading technology capable to be extended so Moore's law, the shrinkage of IC critical features, can continue to be valid. SCHOTT Lithotec has introduced all relevant technology steps to manufacture EUV mask blanks, ranging from Low Thermal Expansion Material (LTEM) with high quality substrate polishing to low defect blank manufacturing. New polishing and cleaning technologies, improved sputter technology and updated metrology enable us to routinely produce EUVL mask blanks meeting already many of the roadmap requirements. Further R&D is ongoing to path the way to the production of EUV blanks which meet all requirements. An important focus of this paper is to present the recent results on LTEM substrates, which include defect density, roughness and flatness simultaneously, as well as EUVL multilayer properties such as defect density, optical properties like reflectivity and uniformity in the EUV range and optical resistance to cleaning steps. In addition the design of EUVL absorber material will be discussed, including optical performance at EUV wavelength and its contrast behavior. Finally, IMS Chips has developed the dry etch process of these EUV Mask Blanks by optimizing etch selectivities, profiles and etch bias. Results on CD uniformity, linearity and iso/dense bias will be presented.
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Holger Seitz, Holger Seitz, Markus Renno, Markus Renno, Thomas Leutbecher, Thomas Leutbecher, Nathalie Olschewski, Nathalie Olschewski, Torsten Reichardt, Torsten Reichardt, Ronny Walter, Ronny Walter, Helmut Popp, Helmut Popp, Günter Hess, Günter Hess, Florian Letzkus, Florian Letzkus, Jörg Butschke, Jörg Butschke, Mathias Irmscher, Mathias Irmscher, "EUVL mask blanks: Recent results on substrates, multilayers and the dry-etch process of TaN-absorbers", Proc. SPIE 6151, Emerging Lithographic Technologies X, 615109 (22 March 2006); doi: 10.1117/12.655540; https://doi.org/10.1117/12.655540
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