22 March 2006 Demonstration of phase-shift masks for extreme-ultraviolet lithography
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We report on a method to produce any type of phase-shift masks for EUV lithography. We have successfully fabricated an unattenuated phase-shift mask consisting of phase patterns and confirmed the expected performance of such a mask through resist printing at λ=13.3 nm. Finally actinic metrology reveals that these etched-multilayer masks, left without a capping layer, tend to degrade over time.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Bruno La Fontaine, Adam R. Pawloski, Obert Wood, Yunfei Deng, Harry J. Levinson, Patrick Naulleau, Paul E. Denham, Eric Gullikson, Brian Hoef, Christian Holfeld, Christian Chovino, Florian Letzkus, "Demonstration of phase-shift masks for extreme-ultraviolet lithography", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510A (22 March 2006); doi: 10.1117/12.652212; https://doi.org/10.1117/12.652212


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