23 March 2006 Development of CO2 laser produced Xe plasma EUV light source for microlithography
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Abstract
A CO2 laser driven Xe droplet plasma is presented as a light source for EUV lithography. A short-pulse TEA CO2 master oscillator power amplifier system and a pre-pulse Nd:YAG laser were used for initial experiment with 0.6% of CE from a Xe jet. A target technology is developed for high average power experiments based on a Xe droplet at 100kHz. Magnetic field ion mitigation is shown to work well in the pre-pulsed plasma combined with a CO2 laser main pulse. This result is very promising with respect to collector mirror lifetime extension by magnetic field mitigation. A master oscillator power amplifier (MOPA) CO2 laser system is under development with a few kW and 100 kHz repetition rate with less than 15ns laser pulse width using a waveguide Q-switched CO2 laser oscillator and RF-excited fast axial flow CO2 laser amplifiers.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hakaru Mizoguchi, Akira Endo, Tatsuya Ariga, Taisuke Miura, Hideo Hoshino, Yoshifumi Ueno, Masaki Nakano, Hiroshi Komori, Akira Sumitani, Tamotsu Abe, Takashi Suganuma, Georg Soumagne, Hiroshi Someya, Yuichi Takabayashi, Koichi Toyoda, "Development of CO2 laser produced Xe plasma EUV light source for microlithography", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510S (23 March 2006); doi: 10.1117/12.656941; https://doi.org/10.1117/12.656941
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