23 March 2006 Development of CO2 laser produced Xe plasma EUV light source for microlithography
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Abstract
A CO2 laser driven Xe droplet plasma is presented as a light source for EUV lithography. A short-pulse TEA CO2 master oscillator power amplifier system and a pre-pulse Nd:YAG laser were used for initial experiment with 0.6% of CE from a Xe jet. A target technology is developed for high average power experiments based on a Xe droplet at 100kHz. Magnetic field ion mitigation is shown to work well in the pre-pulsed plasma combined with a CO2 laser main pulse. This result is very promising with respect to collector mirror lifetime extension by magnetic field mitigation. A master oscillator power amplifier (MOPA) CO2 laser system is under development with a few kW and 100 kHz repetition rate with less than 15ns laser pulse width using a waveguide Q-switched CO2 laser oscillator and RF-excited fast axial flow CO2 laser amplifiers.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hakaru Mizoguchi, Hakaru Mizoguchi, Akira Endo, Akira Endo, Tatsuya Ariga, Tatsuya Ariga, Taisuke Miura, Taisuke Miura, Hideo Hoshino, Hideo Hoshino, Yoshifumi Ueno, Yoshifumi Ueno, Masaki Nakano, Masaki Nakano, Hiroshi Komori, Hiroshi Komori, Akira Sumitani, Akira Sumitani, Tamotsu Abe, Tamotsu Abe, Takashi Suganuma, Takashi Suganuma, Georg Soumagne, Georg Soumagne, Hiroshi Someya, Hiroshi Someya, Yuichi Takabayashi, Yuichi Takabayashi, Koichi Toyoda, Koichi Toyoda, } "Development of CO2 laser produced Xe plasma EUV light source for microlithography", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61510S (23 March 2006); doi: 10.1117/12.656941; https://doi.org/10.1117/12.656941
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