23 March 2006 Progress in LPP EUV source development at Osaka University
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Abstract
For EUV lithography the generation of clean and efficient light source and the high-power laser technology are key issues. Theoretical understanding with modeling and simulation of laser-produced EUV source based on detailed experimental database gives us the prediction of optimal plasma conditions and their suitable laser conditions for different target materials (tin, xenon and lithium). With keeping etendue limit the optimal plasma size is determined by an appropriate optical depth which can be controlled by the combination of laser wavelength and pulse width. The most promising candidate is tin (Sn) plasma heated by Nd:YAG laser with a pulse width of a few ns. Therefore the generation technology of clean Sn plasma is a current important subject to be resolved for practical use. For this purpose we have examined the feasibility of laser-driven rocket-like injection of extremely mass-limited Sn or SnO2 (punched-out target) with a speed exceeding 100m/s. Such a mass-limited low-density target is most preferable for substantial reduction of ion energy compared with usual bulk target. For high average power EUV generation we are developing a laser system which is CW laser diode pumped Nd:YAG ceramic laser (master oscillator and power amplifier system) operating at 5-10 kHz repetition rate. The design of practical laser for EUV source is being carried out based on the recent performance of >1 kW output power.
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Noriaki Miyanaga, Noriaki Miyanaga, Hiroaki Nishimura, Hiroaki Nishimura, Shinsuke Fujioka, Shinsuke Fujioka, Tatsuya Aota, Tatsuya Aota, Shigeaki Uchida, Shigeaki Uchida, Michiteru Yamaura, Michiteru Yamaura, Yoshinori Shimada, Yoshinori Shimada, Kazuhisa Hashimoto, Kazuhisa Hashimoto, Keiji Nagai, Keiji Nagai, Takayoshi Norimatsu, Takayoshi Norimatsu, Katsunobu Nishihara, Katsunobu Nishihara, Masakatsu Murakami, Masakatsu Murakami, Vasilli Zhakhovskii, Vasilli Zhakhovskii, Young Gwang Kang, Young Gwang Kang, Atsushi Sunahara, Atsushi Sunahara, Hiroyuki Furukawa, Hiroyuki Furukawa, Akira Sasaki, Akira Sasaki, Takeshi Nishikawa, Takeshi Nishikawa, Massahiro Nakatsuka, Massahiro Nakatsuka, Hisanori Fujita, Hisanori Fujita, Koji Tsubakimoto, Koji Tsubakimoto, Hidetsugu Yoshida, Hidetsugu Yoshida, Yasukazu Izawa, Yasukazu Izawa, Kunioki Mima, Kunioki Mima, } "Progress in LPP EUV source development at Osaka University", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61511Q (23 March 2006); doi: 10.1117/12.656555; https://doi.org/10.1117/12.656555
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