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24 March 2006 Three-dimensional rigorous simulation of EUV defective masks using modal method by Fourier expansion
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Abstract
In Extreme Ultraviolet Lithography, the electromagnetic modelling of the mask allows determining the influence of the mask structure on the electromagnetic field. That makes it possible to take into account the presence of a defect modifying the multi-layer stack1,2. The method used throughout this paper is the MMFE (Modal Method by Fourier Expansion) also known as the RCWA (Rigorous Coupled Wave Analysis). Modal methods allow computing the electromagnetic field just above the EUV mask or the near field. Modal methods are well adapted for EUV mask simulation due to materials and structure size. The previous works performed on 2D simulation with MMFE3 have shown the influence of a defect inside a EUV mask structure. In this article, the method is extended to address 3D structures. The printability of a spherical shaped defect is analyzed depending on the deposition process used. The influence of a 3D defect position regarding the position of a line absorber is also shown.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Rafik Smaali, Maxime Besacier, and Patrick Schiavone "Three-dimensional rigorous simulation of EUV defective masks using modal method by Fourier expansion", Proc. SPIE 6151, Emerging Lithographic Technologies X, 615124 (24 March 2006); https://doi.org/10.1117/12.655495
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