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24 March 2006 Model-based lithography verification system for multilayer structure in electron-beam direct writing
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Abstract
In the high-energy electron-beam lithography, proximity effects caused by the multilayer structure including heavy-metal materials are crucial for the resist patterning. The proximity effect depends not only on the pattern arrangement in the underlying layers but also on the critical dimension (CD) variation of patterned metal in the underlying layers and the chemical-mechanical polishing (CMP) non-uniformity among chips on a wafer. This paper proposes a novel lithography verification method based on the SEEF model, where the backscattering deposited energy intensity distribution to the resist is calculated by the mapping of transmitted electron energy flux and reflected electron energy flux in the multilayer structure. The verification method provides the capability of CD error prediction considered the proximity effect caused by the multilayer structure.
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Kozo Ogino, Hiromi Hoshino, and Yasuhide Machida "Model-based lithography verification system for multilayer structure in electron-beam direct writing", Proc. SPIE 6151, Emerging Lithographic Technologies X, 615129 (24 March 2006); https://doi.org/10.1117/12.656105
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