24 March 2006 The EUV resist test center at SEMATECH-North
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Proceedings Volume 6151, Emerging Lithographic Technologies X; 61512U (2006); doi: 10.1117/12.657683
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States
Abstract
The availability of photoresists meeting simultaneous resolution, sensitivity, and line edge roughness performance is a critical challenge for the acceptance of Extreme Ultraviolet Lithography. The Extreme Ultraviolet Resist Test Center (EUV RTC) at SEMATECH-North at the State University of New York at Albany is a state of the art facility to support the development of photoresists for EUV lithography. The facility was opened on September 28, 2005, for customer use. SEMATECH researchers, member companies, resist suppliers, and researchers from universities and institutes worldwide can use this neutral site for EUV resist development. The heart of the EUV RTC is an Exitech 5X EUV microstepper with a 0.3 numerical aperture (NA) lens. This tool has successfully imaged 45 nm dense lines in photoresists, and the ultimate imaging performance of the microstepper based on optics and wavefront quality should be near 25nm dense lines.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Klaus Lowack, Andy Rudack, Kim Dean, Matt Malloy, Mike Lercel, "The EUV resist test center at SEMATECH-North", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61512U (24 March 2006); doi: 10.1117/12.657683; https://doi.org/10.1117/12.657683
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KEYWORDS
Extreme ultraviolet

Extreme ultraviolet lithography

Semiconducting wafers

Real-time computing

Photoresist materials

Lithography

Contamination

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