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24 March 2006 Process window study with various partial coherences on EUV MET (micro exposure tool) optics
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EUV lithography has the ability to support 22 nm logic (or 32nm half pitch) node and beyond. Similar to the DUV lithographic systems, partial coherence on EUV lithographic systems can have a big impact on process latitude for critical layers. Thus, it is important to understand the effect of partial coherence on EUV imaging systems. In this paper, process windows with various illumination settings are investigated. The experiments were done using the MET station at the Advance Light Source (ALS). The exposures were targeted for 60 nm, 50 nm, and 45 nm dense features. The outer and inner sigmas of annular illumination varied from 0.2 to 0.8. In addition, dipole, C-quad, and quad illuminations were used to explore the impact of the partial coherence on the process window. Knowledge gained can then be applied to verify lithography models and aid in future tool designs.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Sang Hun Lee, Courtney Brewer, and Manish Chandhok "Process window study with various partial coherences on EUV MET (micro exposure tool) optics", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61512V (24 March 2006);


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