24 March 2006 KrF laser driven xenon plasma light source of a small-field exposure tool
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Abstract
A small field exposure tool (SFET) is currently being built in Japan by the Extreme Ultraviolet Lithography System Development Association (EUVA) and Canon Inc. The laser plasma light source of SFET has been developed at the EUVA Hiratsuka R&D center. The drive laser of the xenon plasma source is a short-pulse, high-power KrF laser, that has been developed in cooperation with Gigaphoton Inc. and Komatsu Ltd. The laser has a maximum output power of 580W at 4kHz repetition rate. The xenon target is a 50 micrometer diameter liquid jet with a speed of about 30 m/s. The source has been designed to generate 0.5W in-band power at the intermediate focus at a collecting solid angle of pi sr. The set-up of the source at the Hiratsuka R&D center has been completed and the source is now being evaluated.
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Tamotsu Abe, Tamotsu Abe, Masato Moriya, Masato Moriya, Hiroshi Someya, Hiroshi Someya, Georg Soumagne, Georg Soumagne, Takashi Suganuma, Takashi Suganuma, Takayuki Watanabe, Takayuki Watanabe, Akira Sumitani, Akira Sumitani, Hakaru Mizoguchi, Hakaru Mizoguchi, } "KrF laser driven xenon plasma light source of a small-field exposure tool", Proc. SPIE 6151, Emerging Lithographic Technologies X, 61513T (24 March 2006); doi: 10.1117/12.656228; https://doi.org/10.1117/12.656228
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