Dome scatterometry for the measurement of advanced geometry semiconductor devices

Christopher J. Raymond; Mike Littau; Darren Forman; Steven G. Hummel

doi:10.1117/12.656466

24 March 2006 Dome scatterometry for the measurement of advanced geometry semiconductor devices

Christopher J. Raymond, Mike Littau, Darren Forman, Steven G. Hummel

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61521I (2006) https://doi.org/10.1117/12.656466
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

In this work we demonstrate the application of a unique type of scatterometer to the measurement of advanced geometry semiconductor devices. Known as a dome scatterometer, the technology is capable of measuring multiple diffraction orders at multiple angles of incidence, thereby providing a means for gathering a large amount of scatterometry data in a short period of time. Dome scatterometers are also capable of measuring light scattered as a function of both theta (zenith) and phi (azimuth) incident angles, and for a variety of polarimetric configurations, all of which provide more information about the scattering structure and contribute to improved sensitivity. A dome scatterometer can also measure a grating structure regardless of its orientation, so that horizontal and vertical structures can be measured without the need for a wafer rotation. Prior to initiating measurements with the dome scatterometer, we surveyed available laser sources and modeled their expected sensitivity theoretically to determine the best illumination wavelength for the applications we intended to study. Our findings demonstrated that a wavelength around 405nm is suitable for a wide variety of applications, but provides the best improved sensitivity for etch applications. We then modified our dome scatterometry optical system to accommodate a Using a 405nm laser, and performed measurements were performed on several types of grating structures. Examples of the excellent signal-to-noise ratio of dome scatterometry measurements across these applications are provided. Measurement data from applications including patterned photoresist, patterned poly lines and back-end trench interconnect structures will be presented. Comparisons to metrology tools such as AFM and CD-SEM will be made. Precision data will also be summarized, and the extendibility of dome scatterometry will be discussed.

Citation Download Citation

Christopher J. Raymond, Mike Littau, Darren Forman, and Steven G. Hummel "Dome scatterometry for the measurement of advanced geometry semiconductor devices", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61521I (24 March 2006); https://doi.org/10.1117/12.656466

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