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24 March 2006 Characterizing optical proximity effect difference among exposure tools
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Abstract
In terms of mass production, the CD variation between exposure tools is not avoidable because of different exposure tool characteristics. The major CD variation is coming from different optical proximity effect (OPE) response between exposure tools. Knowing and control the major contributor to the OPE, ramping up the device will be faster because of one reticle usage in various exposure tools. Therefore, the quantitative measurement and simulation with actual exposure tool characteristics need for analyzing proximity impact to CD. For this purpose, collecting CD data on the wafers and analyzing was carried out to find large ID bias exposure tool. Normal and abnormal exposure tool in terms of proximity matching is inspected using LITEL products of ISITM(In-situ Interferometer) and SMITM(Source Metrology Interferometer). ISITM and SMITM were for collecting machine characteristic and Solid-ETM was for simulation purposes. From this study, the practical procedure is proposed to prevent using of large proximity exposure tool for production line and the impact of actual tools characteristic on proximity matching is known.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jongkyun Hong, Jeonkyu Lee, Eunsuk Kang, Hyunjo Yang, Donggyu Yim, and Jinwoong Kim "Characterizing optical proximity effect difference among exposure tools", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522N (24 March 2006); https://doi.org/10.1117/12.656918
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