Characterizing optical proximity effect difference among exposure tools

Jongkyun Hong; Jeonkyu Lee; Eunsuk Kang; Hyunjo Yang; Donggyu Yim; Jinwoong Kim

doi:10.1117/12.656918

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24 March 2006 Characterizing optical proximity effect difference among exposure tools

Jongkyun Hong, Jeonkyu Lee, Eunsuk Kang, Hyunjo Yang, Donggyu Yim, Jinwoong Kim

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Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61522N (2006) https://doi.org/10.1117/12.656918
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

In terms of mass production, the CD variation between exposure tools is not avoidable because of different exposure tool characteristics. The major CD variation is coming from different optical proximity effect (OPE) response between exposure tools. Knowing and control the major contributor to the OPE, ramping up the device will be faster because of one reticle usage in various exposure tools. Therefore, the quantitative measurement and simulation with actual exposure tool characteristics need for analyzing proximity impact to CD. For this purpose, collecting CD data on the wafers and analyzing was carried out to find large ID bias exposure tool. Normal and abnormal exposure tool in terms of proximity matching is inspected using LITEL products of ISI^TM(In-situ Interferometer) and SMI^TM(Source Metrology Interferometer). ISI^TM and SMI^TM were for collecting machine characteristic and Solid-E^TM was for simulation purposes. From this study, the practical procedure is proposed to prevent using of large proximity exposure tool for production line and the impact of actual tools characteristic on proximity matching is known.

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Jongkyun Hong, Jeonkyu Lee, Eunsuk Kang, Hyunjo Yang, Donggyu Yim, and Jinwoong Kim "Characterizing optical proximity effect difference among exposure tools", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61522N (24 March 2006); https://doi.org/10.1117/12.656918

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