AIM technology for nonvolatile memories microelectronics devices

Pier Luigi Rigolli; Laura Rozzoni; Catia Turco; Umberto Iessi; Marco Polli; Elyakim Kassel; Pavel Izikson; Yosef Avrahamov

doi:10.1117/12.656485

24 March 2006 AIM technology for nonvolatile memories microelectronics devices

Pier Luigi Rigolli, Laura Rozzoni, Catia Turco, Umberto Iessi, Marco Polli, Elyakim Kassel, Pavel Izikson, Yosef Avrahamov

Author Affiliations +

Proceedings Volume 6152, Metrology, Inspection, and Process Control for Microlithography XX; 61524C (2006) https://doi.org/10.1117/12.656485
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Accurate and precise overlay metrology is a critical requirement in order to achieve high product yield in microelectronic manufacturing. Meeting the tighter overlay measurement error requirements for 90nm technology and beyond is a dramatic challenge for optical metrology techniques using only conventional overlay marks like Bar in Bar (BiB) or Frame in Frames (FiF). New deficiencies, affecting traditional overlay marks, become evident as microlithography processes are developed for each new design rule node. The most serious problems are total measurement uncertainty, CMP process robustness, and device correlation. In this paper we will review the superior performances of grating-based AIM marks to provide a complete solution to control lithography overlay errors for new generation devices. Examples of successful application of AIM technology to FEOL and Cu-BEOL process steps of advanced non volatile memory devices manufacturing are illustrated. An additional advantage of the adoption of AIM marks is that the significant reduction of target noise versus conventional marks revealed systematic differences within the lithography cluster which were previously obscure offering a new tool to optimize litho cells. In this paper we demonstrated that AIM target architecture enables high performance metrology with design rule segmented targets - a prerequisite to have overlay marks fully compatible with design rule sensitive process steps.

Citation Download Citation

Pier Luigi Rigolli, Laura Rozzoni, Catia Turco, Umberto Iessi, Marco Polli, Elyakim Kassel, Pavel Izikson, and Yosef Avrahamov "AIM technology for nonvolatile memories microelectronics devices", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61524C (24 March 2006); https://doi.org/10.1117/12.656485

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available