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24 March 2006 Landing energy influence on CD-SEM measurement precision and accuracy
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The rapid evolution of lithography to finer features has forced resist vendors to develop new resist chemical compositions in order to fulfill lithography and metrology requirements. However, an unintended consequence of these formulations has been the resists' sensitivity to electron beam radiation. While many studies have been conducted in describing resist slimming seen during CD-SEM measurements[1-5], in this paper we not only investigate the influence of measurement acquisition parameters - especially landing energy, probe current, and acquisition time on the accuracy of the measurement, we also explore the effect of these parameters on the precision. The measurements were performed on a CD-SEM with Ultra Low Voltage (ULV) capabilities. Reference measurements were performed using a CD-AFM, and serve as the basis for the accuracy measurements. Additionally the CD precision results are described in terms of the CDU metric, which provides a method of evaluating the tool contribution to the precision, when the measured features change from measurement to measurement.
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Anne-Lise Fabre, Johann Foucher, M. Poulingue, P. Fabre, and Ganesh Sundaram "Landing energy influence on CD-SEM measurement precision and accuracy", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61524J (24 March 2006);

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