24 March 2006 65-nm photolithography process window qualification study with advanced e-beam metrology and inspection systems
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Abstract
Focus exposure matrix (FEM) using contact mask is applied to two 65-nm production wafers. One wafer is dropped at after etch inspection (AEI) while another one is stopped after tungsten chemical mechanical polishing (WCMP). Gray level value (GLV) and critical dimension (CD) are measured using eProfile(R) at different hole patterns, such as dense, isolate, and static random access memory (SRAM) array of the contact AEI wafer. All results show very reasonable CD variation trends in focus exposure PWQ chart. Defect inspections using eScan(R)300 is performed on WCMP wafer at SRAM array area. The major defects detected are missing, bridging and dark voltage contrast (DVC) which is caused by open or partial open of the contact hole. We found that open defect is mainly sensitive to exposure energy. The higher the exposure energy, the fewer the DVC defects. The GLV map of oval tungsten plug (W-plug) correlates with GLV map of oval contact and DVC defect map very well.
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Ruei Hung Hsu, Benjamin Szu-Min Lin, Wei-Yih Wu, Hong Xiao, Jack Jau, "65-nm photolithography process window qualification study with advanced e-beam metrology and inspection systems", Proc. SPIE 6152, Metrology, Inspection, and Process Control for Microlithography XX, 61524K (24 March 2006); doi: 10.1117/12.657356; https://doi.org/10.1117/12.657356
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KEYWORDS
Semiconducting wafers

Inspection

Photomasks

Defect inspection

Finite element methods

Critical dimension metrology

Scanning electron microscopy

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