13 March 2006 Self assembly in semiconductor microelectronics: self-aligned sub-lithographic patterning using diblock copolymer thin films
Author Affiliations +
Abstract
Self-assembling diblock copolymer thin films are an intriguing possible photolithography alternative for high-resolution patterning of advanced integrated circuit device elements. Cylindrical- and lamellar-phase materials spontaneously form patterns suggestive of contact-hole arrays and transistor gates at critical dimensions below 20nm. Besides high resolution, any serious lithographic process requires a means of pattern registration, and we discuss our efforts to develop self-aligned self assembly techniques using diblock copolymer materials. We describe the critical role of polymer surface interactions in affecting self-assembled pattern orientations. Control and design of surface properties allow precise registration of sub-20nm polymer domains to larger-scale lithographic layers.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
C. T. Black, C. T. Black, R. Ruiz, R. Ruiz, } "Self assembly in semiconductor microelectronics: self-aligned sub-lithographic patterning using diblock copolymer thin films", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615302 (13 March 2006); doi: 10.1117/12.659252; https://doi.org/10.1117/12.659252
PROCEEDINGS
11 PAGES


SHARE
Back to Top