11 April 2006 Performance of a dry 193nm resist under wet conditions
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Abstract
193 nm immersion lithography is rapidly moving towards industrial application, and an increasing number of tools are being installed worldwide, all of which will require immersion-capable photoresists to be available. At the same time, existing 193 nm processes are being ramped up using dry lithography. In this situation, it would be highly advantageous to have a single 193 nm resist that can be used under both dry and wet conditions, at least in the initial stages of 45nm node process development. It has been shown by a number of studies that the dominant (meth)acrylate platform of 193 nm dry lithography is in principle capable of being ported to immersion lithography, however, it has been an open question whether a single resist formulation can be optimized for dry and wet exposures simultaneously. For such a dry/wet crossover resist to be successful, it will need to make very few compromises in terms of performance. In particular, the resist should have similar LER/LWR, acceptable process window and controlled defects under wet and dry exposure conditions. Additionally, leaching should be at or below specifications, preferably without but at very least with the use of a top protective coat. In this paper, we will present the performance of resists under wet and dry conditions and report on the feasibility of such crossover resists. Available results so far indicate that it is possible to design such resists at least for L/S applications. Detailed data on lithographic performance under wet and dry conditions will be presented for a prototype dry/wet crossover L/S resist.
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Munirathna Padmanaban, Andrew Romano, Guanyang Lin, Simon Chiu, Allen Timko, Frank Houlihan, Dalil Rahman, S. Chakrapani, T. Kudo, Ralph R. Dammel, Karen Turnquest, Georgia Rich, Scott D. Schuetter, Timothy A. Shedd, and Gregory F. Nellis "Performance of a dry 193nm resist under wet conditions", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615307 (11 April 2006); doi: 10.1117/12.659392; https://doi.org/10.1117/12.659392
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