29 March 2006 All-organic non-PFOS nonionic photoacid generating compounds with functionalized fluoroorganic sulfonate motif for chemically amplified resists
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Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61530J (2006); doi: 10.1117/12.656500
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States
Abstract
Nonionic photoacid generators (PAGs) based on photosensitive fluoroorganic sulfonate esters of imide and nitrobenzyl have been prepared and characterized. These new compounds produce fluoroorganic sulfonic acids that contain very few fluorine atoms (non-PFOS), which make them attractive PAGs for all advanced and emerging lithography. The structural influence of these new PAGs on sensitivity, resolution and line edge roughness (LER) was investigated by using DUV (254 nm) and e-beam lithography with ESCAP and ACRYLIC type positive tone resists. E-beam lithography evaluation indicates that these new fluroorganic sulfonic acids are sensitive and capable of providing image profiles down to 80 nm. The variation observed in sensitivity and LER at e-beam lithography was analyzed in terms of the structures of the photogenerated acids, chromophores and resists.
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Ramakrishnan Ayothi, Yi Yi, Christopher K. Ober, Steve Putna, Wang Yueh, Heidi Cao, "All-organic non-PFOS nonionic photoacid generating compounds with functionalized fluoroorganic sulfonate motif for chemically amplified resists", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530J (29 March 2006); doi: 10.1117/12.656500; https://doi.org/10.1117/12.656500
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KEYWORDS
Lithography

Electron beam lithography

Line edge roughness

Chromophores

Carbon

Absorption

Fluorine

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