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29 March 2006 Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations
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The weaker etch resistance of 193 nm resists1 is raising questions concerning their usability for the coming nodes as a single layer resist. We have found that 193 nm positive tone resists, that have been designed2 incorporating etch resistant groups like adamantyl or isobornyl3-7, exhibit chemical modifications concerning these grafted functions while undergoing an oxide etch step. Previously performed experiments have pointed out that the photoacid generator (PAG) that is still contained in the unexposed regions of the sacrificial layer might be a reason for the modifications in the chemical buildup of this resists. Therefore, this work has focused on evaluating the impact of reactive ion oxide etching8-10 on 193nm materials, for positive and negative tone chemically amplified resists. We used Thermo Gravimetric Analysis (TGA), Fourier Transformed Infra Red Spectroscopy (FTIR) and Atomic Force Microscopy (AFM) in order to check model formulations based on PHS, methacrylate or cyclic olefin polymers with various protecting groups having different activation energies and formulated with or without PAG and in order to understand the impact of the photoactive compound in the resist degradation behavior during plasma etch.
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M. J. May, B. Mortini, C. Sourd, D. Perret, D. W. Chung, G. Barclay, C. Brochon, and G. Hadziioannou "Evaluating resist degradation during reactive ion oxide etching using 193 nm model resist formulations", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530P (29 March 2006);

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