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29 March 2006 Defect marginality screen for resists patterned in random bright field layout
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Resists with robust defect margins for bright field patterning are critical to high resolution lithography. In this paper, we present the application of analytical techniques to screen high resolution photoresists with reduced tendency to form side-lobe defects from diffraction in ePSM and chromeless APSM lithography. Resist candidates are compared based on a novel method to determine accurate high-contrast development etch rate curve data from diluted normality analysis combined with attenuated FTIR. The measured data is applied to determine parameters for aerial image and molecular level resist models which screen potential resists for performance in side-lobe suppression within random mask layout. Feature level prediction and experimental validation is discussed as well as general selection criteria for high resolution, low-defect liability resist materials for severe bright field ePSM and APSM lithography.
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David Fryer, Vivek Singh, Andrew Muray, Sushil Dhoot, and Sam Sivakumar "Defect marginality screen for resists patterned in random bright field layout", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61530U (29 March 2006); doi: 10.1117/12.658060;


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