29 March 2006 Fundamentals of the reaction-diffusion process in model EUV photoresists
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Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615313 (2006); doi: 10.1117/12.656831
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States
Abstract
More demanding requirements are being made of photoresist materials for fabrication of nanostructures as the feature critical dimensions (CD) decrease. For extreme ultraviolet (EUV) resists, control of line width roughness (LWR) and high resist sensitivity are key requirements for their success. The observed LWR and CD values result from many factors in interdependent processing steps. One of these factors is the deprotection interface formed during the post-exposure bake (PEB) step. We use model EUV photoresist polymers to systematically address the influence of exposure-dose on the spatial evolution of the deprotection reaction at a model line edge for fixed PEB time using neutron reflectivity. The bilayer consists of an acid feeder layer containing photoacid generator (PAG) and a model photoresist polymer, poly(hydroxystyrene-co-tert-butylacrylate) with perdeuterated t-butyl protecting group. The deuterium labeling allows the protection profile to be measured with nanometer resolution. The evolution of two length scales that contribute to the compositional profile is discussed.
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Kristopher A. Lavery, Kwang-Woo Choi, Bryan D. Vogt, Vivek M. Prabhu, Eric K. Lin, Wen-li Wu, Sushil K. Satija, Michael J. Leeson, Heidi B. Cao, George Thompson, Hai Deng, David S. Fryer, "Fundamentals of the reaction-diffusion process in model EUV photoresists", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615313 (29 March 2006); doi: 10.1117/12.656831; https://doi.org/10.1117/12.656831
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