29 March 2006 Deconstructing the resist to probe innate material roughness
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Abstract
We have developed an AFM-based technique to measure intrinsic material roughness after base development. This method involves performing an interrupted development of the resist film and measuring the resulting film roughness after a certain fixed film loss. Employing this technique, we have deconstructed the resist into component materials and established that the PAG is a major material contributor of film roughness and that PAG segregation in the resist is likely responsible for nano-scale dissolution inhomogeneities. Small differences in PAG concentration as a result of standing waves in the resist can lead to large changes in surface roughness due to PAG or PAG-photoproduct segregation and the resultant non-linear change in nano-scale dissolution rates. The temperature dependence of the PAG segregation suggests that increased mobility of the PAG occurs due to a lowering of the film Tg during the deprotection process.
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T. H. Fedynyshyn, T. H. Fedynyshyn, R. F. Sinta, R. F. Sinta, D. K. Astolfi, D. K. Astolfi, A. Cabral, A. Cabral, J. Roberts, J. Roberts, R. Meagley, R. Meagley, } "Deconstructing the resist to probe innate material roughness", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615315 (29 March 2006); doi: 10.1117/12.654437; https://doi.org/10.1117/12.654437
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