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29 March 2006 Effects of material design on extreme ultraviolet (EUV) resist outgassing
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Abstract
Optics contamination is a huge concern for extreme ultraviolet (EUV) lithography. In efforts to protect EUV optics, all materials used in EUV vacuum exposure chambers must be screened prior to use. Photoresists are a concern since a freshly coated wafer will be introduced into the chamber approximately every minute in a high volume production tool. SEMATECH has initiated a resist outgassing program to screen new resists and to learn outgassing characteristics using model compounds. This paper presents outgassing data for commercial resists as well as resists made by university researchers. Several resists made at the University of North Carolina at Charlotte (UNCC) were measured, including polymer-bound photoacid generator (PAG) resists such as poly (HOST-co-EAMA-co-PAG). Previous papers have reported that a large portion of outgassing is due to PAG fragments and deblocking groups. The UNCC resists outgas an order of magnitude less than most commercial resists tested by SEMATECH. This may be due to the low diffusion of the acid-cleavable adamantyl groups after exposure. In addition, fewer PAG species outgassed in the polymer-bound PAG resist than in blend PAG resists.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kim R. Dean, Kenneth E. Gonsalves, and Muthiah Thiyagarajan "Effects of material design on extreme ultraviolet (EUV) resist outgassing", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61531E (29 March 2006); https://doi.org/10.1117/12.657163
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