Characteristics of low <i>E<sub>a</sub></i> 193-nm chemical amplification resists

Toshiyuki Ogata; Yohei Kinoshita; Sanae Furuya; Shogo Matsumaru; Motoki Takahashi; Daiju Shiono; Takahiro Dazai; Hideo Hada; Masamitsu Shirai

doi:10.1117/12.656199

29 March 2006 Characteristics of low E_a 193-nm chemical amplification resists

Toshiyuki Ogata, Yohei Kinoshita, Sanae Furuya, Shogo Matsumaru, Motoki Takahashi, Daiju Shiono, Takahiro Dazai, Hideo Hada, Masamitsu Shirai

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615328 (2006) https://doi.org/10.1117/12.656199
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Polymers with methyl acetal ester moiety in the side chain as acid labile protecting group were synthesized and their thermal property, plasma stability and chemical amplification (CA) positive-tone resist characteristics were investigated. 2-Admantyloxymethyl (AdOM) groups in the copolymer indicated lower glass transition temperatures and higher thermal decomposition temperatures than those of 2-methyl-2-admantyl (MAd) groups in the copolymer. AdOM polymer film showed smooth surface roughness after Ar plasma exposure compared with MAd polymer film due to the high thermal stability. The activation energies (E_a) of these deprotection reactions were calculated from Arrhenius plots of these deprotection reaction rate constants. In the low post exposure bake (PEB) temperature region, the E_a of these resists decreased in the order MAd > AdOM. The low E_a methyl acetal resists displayed good thermal flow resist characteristics for contact holes printing. In addition, the low E_a methyl acetal resist achieved a wide exposure latitude of 8.1 % and depth of focus of 400 nm for printing 80 nm 1:1 dense line pattern using NSR-306C (NA 0.78, 2/3 annular). Furthermore, the 65 nm 1:1 dense lines using ASML XT1400 (NA 0.93, C-Quad) for low E_a methyl acetal resist pattern showed no tapered and no footing profiles and small roughness on the lines pattern sidewall was observed.

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Toshiyuki Ogata, Yohei Kinoshita, Sanae Furuya, Shogo Matsumaru, Motoki Takahashi, Daiju Shiono, Takahiro Dazai, Hideo Hada, and Masamitsu Shirai "Characteristics of low E_a 193-nm chemical amplification resists", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615328 (29 March 2006); https://doi.org/10.1117/12.656199

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