29 March 2006 Studies on a cross-linking type positive 193nm photoresist material
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Abstract
A kind of diacid, acrylpimaric acid, with condensed alicyclic structure and good film-forming property, was prepared by the Diels-Alder reaction of abietic acid and acrylic acid. In their solid film, the diacid can react with divinyl ether, such as 1,3-divinyloxyethoxybenzene when baked above 80oC and become insoluble in dilute aqueous base. Thus formed compound can be quickly decomposed at the presence of strong acid generated by PAG above 100oC and become easily soluble in dilute aqueous base. A positive photoresist can be formed by the diacid, divinyl ether and PAG. The measured photosensitivity is less than 50 mj/cm2 when exposed to low pressure Hg lamp (254nm). The diacid mixture displayed lower transparency than estimated at 193 nm and should be further purified to be used in 193 nm photoresist.
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Liyuan Wang, Liyuan Wang, Xin Guo, Xin Guo, Zhanxing Chu, Zhanxing Chu, Wenjun Wang, Wenjun Wang, } "Studies on a cross-linking type positive 193nm photoresist material", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615329 (29 March 2006); doi: 10.1117/12.656001; https://doi.org/10.1117/12.656001
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