CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 6153 > Article
Paper
29 March 2006 Versatility in lithographic performance of advanced 193 nm contact hole resist
Takanori Kudo, Guanyang Lin, Dongkwan Lee, Dalil Rahman, Allen Timko, Douglas Mckenzie, Clement Anyadiegwu, Simon Chiu, Frank Houlihan, David Rentkiewicz, Ralph R. Dammel, Munirathna Padmanaban, John Biafore
Author Affiliations +
Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532C (2006) https://doi.org/10.1117/12.659439
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States
Abstract
This paper introduces high performing contact hole resist targeting 65 nm node and below IC applications. Both 80 nm and 100 nm contact hole performance are evaluated under optimized condition by ProlithTM simulations and the advantage of the shrinking technique (RELACSTM) is discussed for 65 nm node. The functionality of 193 nm polymers and the influence of resist components on lithographic performance are described with experimental design. The optimized resist, AZ® AX2050P is versatile in lithographic performance with large process window, excellent resist profile, good contact circularity and sidewall roughness. Its unusual PEB sensitivity property, resist pattern thermal flow behavior and performance with RELACSTM material are also reported. AZ® AXTM2050P has a high resolution combined with a large depth of focus and an iso-dense overlap window with RELACSTM R602 [85 nm CD (NA 0.85) DOF 0.30 μm @ Exposure latitude 8%].
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Takanori Kudo, Guanyang Lin, Dongkwan Lee, Dalil Rahman, Allen Timko, Douglas Mckenzie, Clement Anyadiegwu, Simon Chiu, Frank Houlihan, David Rentkiewicz, Ralph R. Dammel, Munirathna Padmanaban, and John Biafore "Versatility in lithographic performance of advanced 193 nm contact hole resist", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532C (29 March 2006); https://doi.org/10.1117/12.659439
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 9 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Polymers
Lithography
Semiconducting wafers
Photomasks
Photoresist processing
Resolution enhancement technologies
Critical dimension metrology
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top