Versatility in lithographic performance of advanced 193 nm contact hole resist

Takanori Kudo; Guanyang Lin; Dongkwan Lee; Dalil Rahman; Allen Timko; Douglas Mckenzie; Clement Anyadiegwu; Simon Chiu; Frank Houlihan; David Rentkiewicz; Ralph R. Dammel; Munirathna Padmanaban; John Biafore

doi:10.1117/12.659439

29 March 2006 Versatility in lithographic performance of advanced 193 nm contact hole resist

Takanori Kudo; Guanyang Lin; Dongkwan Lee; Dalil Rahman; Allen Timko; Douglas Mckenzie; Clement Anyadiegwu; Simon Chiu; Frank Houlihan; David Rentkiewicz; Ralph R. Dammel; Munirathna Padmanaban; John Biafore

Author Affiliations +

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532C (2006) https://doi.org/10.1117/12.659439
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

This paper introduces high performing contact hole resist targeting 65 nm node and below IC applications. Both 80 nm and 100 nm contact hole performance are evaluated under optimized condition by Prolith^TM simulations and the advantage of the shrinking technique (RELACS^TM) is discussed for 65 nm node. The functionality of 193 nm polymers and the influence of resist components on lithographic performance are described with experimental design. The optimized resist, AZ^® AX2050P is versatile in lithographic performance with large process window, excellent resist profile, good contact circularity and sidewall roughness. Its unusual PEB sensitivity property, resist pattern thermal flow behavior and performance with RELACS^TM material are also reported. AZ^® AX^TM2050P has a high resolution combined with a large depth of focus and an iso-dense overlap window with RELACS^TM R602 [85 nm CD (NA 0.85) DOF 0.30 μm @ Exposure latitude 8%].

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Takanori Kudo, Guanyang Lin, Dongkwan Lee, Dalil Rahman, Allen Timko, Douglas Mckenzie, Clement Anyadiegwu, Simon Chiu, Frank Houlihan, David Rentkiewicz, Ralph R. Dammel, Munirathna Padmanaban, John Biafore, "Versatility in lithographic performance of advanced 193 nm contact hole resist", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532C (29 March 2006); doi: 10.1117/12.659439; https://doi.org/10.1117/12.659439

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