29 March 2006 Molecular resists based on cholate derivatives for electron-beam lithography
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Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 61532D (2006); doi: 10.1117/12.656949
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States
Abstract
We have designed and synthesized cholate derivatives (1,4-Bis(methyloxymethylcholate)cyclohexane: C2ChDM and 1,2-Bis(oxymethylcholate)ethane: C2E) to investigate the properties as a chemically amplified (CA) positive-tone Electron-beam (EB) resist material. C2ChDM and C2E which were easily obtained by one-step esterification from cholic acid and dichloride showed glass transition temperatures (Tgs), 85 and 84oC, respectively. These compounds were dissolved in propylene glycol monomethyl ether acetate (PGMEA) and formed amorphous thin films onto silicon wafers by using a spin-coat method. The etch rates of C2ChDM and C2E, which were measured under CF4/CHF3/Ar mixed gas process, were almost the same as poly (p-hydroxystyrene) (PHS). The model resist samples were formulated with C2ChDM and C2E as base matrix and photo-acid generator (PAG) originated from sulfonium-salt (resist-A and B, respectively). These resists showed good sensitivities with EB exposure. Furthermore, the FT-IR spectra of resist-A and B films unexposed and exposed by the EB lithography tool were measured. From the spectral changes of resist-A and B films, we confirmed that a cleavage reaction of ester bond occurred by EB irradiation and bake treatment, and these resists worked as common CA positive-tone resist. The evaluation results with the resist-A and B by using EB exposure tool indicated the resolution of 120 nm lines and spaces pattern.
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Daiju Shiono, Taku Hirayama, Hideo Hada, Junichi Onodera, Tadashi Arai, Atsuko Yamaguchi, Kyoko Kojima, Hiroshi Shiraishi, Hiroshi Fukuda, "Molecular resists based on cholate derivatives for electron-beam lithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532D (29 March 2006); doi: 10.1117/12.656949; https://doi.org/10.1117/12.656949
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KEYWORDS
Lithography

Etching

FT-IR spectroscopy

Line edge roughness

Semiconducting wafers

Silicon

Silicon films

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