29 March 2006 Thin bilayer resists approach for 193nm and future photolithography
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Resist aspect ratio has always been an issue for lithographic processes. Smaller CD forces the use of thinner resist films, but dry etch needs a certain amount of thickness in the resist. Various techniques have been proposed and researched to overcome these single-layer resist limitations. Bilayer Si-containing resists are a technique of interest and a strong candidate to replace CVD processes. In this paper, we have characterized bilayer resists and their dry-develop processes, and sought possible uses for advanced lithography, especially by using a thin film (70nm-90nm). Bilayer resist dry-develop consists of a film shrink as in an exposure reaction with an early-stage resist surface oxidation. We discuss material requirements for this purpose and provide some after-dry-develop images with small CD.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshi Hishiro, Yoshi Hishiro, Michael Hyatt, Michael Hyatt, } "Thin bilayer resists approach for 193nm and future photolithography", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61532W (29 March 2006); doi: 10.1117/12.659630; https://doi.org/10.1117/12.659630


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