29 March 2006 The reaction mechanism of poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene]
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Abstract
It is a well-known strategy for the improvement of resist performance to halogenate resist materials especially in electron beam and X-ray resists. However, the halogenation of polymers requires special caution for chemically amplified resists, because it may interfere with acid generation. In this work, the acid generation in poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] films was investigated. Acid yields decrease as the ratio of hexafluoroalcohol units increases. This study showed that the reactivity of the polymers with low energy electrons (~0eV) correlates to the decrease of acid yields.
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Hiroki Yamamoto, Hiroki Yamamoto, Takahiro Kozawa, Takahiro Kozawa, Kazumasa Okamoto, Kazumasa Okamoto, Seiichi Tagawa, Seiichi Tagawa, Tomoyuki Ando, Tomoyuki Ando, Mitsuru Sato, Mitsuru Sato, Hiroji Komano, Hiroji Komano, } "The reaction mechanism of poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene]", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533O (29 March 2006); doi: 10.1117/12.656262; https://doi.org/10.1117/12.656262
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