29 March 2006 The reaction mechanism of poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene]
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It is a well-known strategy for the improvement of resist performance to halogenate resist materials especially in electron beam and X-ray resists. However, the halogenation of polymers requires special caution for chemically amplified resists, because it may interfere with acid generation. In this work, the acid generation in poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene] films was investigated. Acid yields decrease as the ratio of hexafluoroalcohol units increases. This study showed that the reactivity of the polymers with low energy electrons (~0eV) correlates to the decrease of acid yields.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroki Yamamoto, Hiroki Yamamoto, Takahiro Kozawa, Takahiro Kozawa, Kazumasa Okamoto, Kazumasa Okamoto, Seiichi Tagawa, Seiichi Tagawa, Tomoyuki Ando, Tomoyuki Ando, Mitsuru Sato, Mitsuru Sato, Hiroji Komano, Hiroji Komano, "The reaction mechanism of poly[4-hydroxystyrene-co-4-(1,1,1,3,3,3-hexafluoro-2-hydroxypropyl)-styrene]", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533O (29 March 2006); doi: 10.1117/12.656262; https://doi.org/10.1117/12.656262

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