Translator Disclaimer
Paper
29 March 2006 Study of cross-linking reactions in negative-type thick-film resists
Author Affiliations +
Abstract
This paper describes a study of a cross-linking reaction model for chemically amplified negative-type thick-film resists. Profile simulation is a major technique used to acquire experimental indicators. For this reason, numerous reports address simulation techniques, and many studies have focused in particular on chemically amplified positive-type resists, due to their role as mainstream resist materials used in the production of ICs. However, virtually no research has been performed on the profile simulation of chemically amplified negative-type thick-film resists. We measured the cross-linking reaction of a chemically amplified negative-type thick-film resist and created a new cross-linking reaction model. Our study demonstrates that this new model is more effective for thick-film resists than conventional models.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yoshihisa Sensu, Atsushi Sekiguchi, and Yoshiyuki Kono "Study of cross-linking reactions in negative-type thick-film resists", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61533S (29 March 2006); https://doi.org/10.1117/12.654166
PROCEEDINGS
12 PAGES


SHARE
Advertisement
Advertisement
Back to Top