Performance comparison of chemically amplified resists under EUV, EB, and KrF exposure

Daisuke Shimizu; Nobuji Matsumura; Toshiyuki Kai; Yoshikazu Yamaguchi; Tsutomu Shimokawa; Koichi Fujiwara

doi:10.1117/12.656097

29 March 2006 Performance comparison of chemically amplified resists under EUV, EB, and KrF exposure

Daisuke Shimizu, Nobuji Matsumura, Toshiyuki Kai, Yoshikazu Yamaguchi, Tsutomu Shimokawa, Koichi Fujiwara

Proceedings Volume 6153, Advances in Resist Technology and Processing XXIII; 615344 (2006) https://doi.org/10.1117/12.656097
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

EUV exposure is crucial to evaluate EUV resists but there are currently a limited number of EUV exposure tools available worldwide. Therefore, an alternative exposure method should be considered to accelerate EUV resist development. To design materials for EUV resist, it is useful to identify and characterize acid generation mechanisms under EUV exposure. To do this, a performance comparison under EUV, EB and KrF exposure was performed to gather information about the acid generation mechanism during EUV exposure. In this paper, the performance of chemically amplified resists under EUV, EB and KrF was compared regarding sensitivity, LWR and pattern-profile not only to consider alternative exposure methods but also to elucidate the acid generation mechanism under EUV exposure. Regarding sensitivity, good correlation was observed between EUV and EB exposure, however, in regard to LWR and resist pattern profile, poor correlation was observed between EUV and EB exposure, and between EUV and KrF exposure. As a result, alternative exposure methods could be used only for basic evaluation and it was determined that EUV exposure was necessary for EUV resist development using chemically amplified resist. From the correlation of sensitivity between EUV and EB exposure, it is suggested that the main acid generation mechanism under EUV exposure was ionization.

Citation Download Citation

Daisuke Shimizu, Nobuji Matsumura, Toshiyuki Kai, Yoshikazu Yamaguchi, Tsutomu Shimokawa, and Koichi Fujiwara "Performance comparison of chemically amplified resists under EUV, EB, and KrF exposure", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615344 (29 March 2006); https://doi.org/10.1117/12.656097

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available