Paper
29 March 2006 Faster sensitivity and non-antimonite permanent photoresist for MEMS
Koichi Misumi, Koji Saito, Atsushi Yamanouchi, Takahiro Senzaki, Toshiki Okui, Hideo Honma
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Abstract
Micro Electro Mechanical Systems (MEMS) is a three-dimensional micro-fabrication technology based on photolithography. The fields of application are extensive and wide-ranging. Among the applications, those that have already acquired a large market include acceleration sensors for airbags of automobiles, pressure sensors for engine control, inkjet printer heads and thin film magnetic heads. The market is expected to further expand in the optic and biology-related fields in the future. In the MEMS field, the packaging accounts for the cost, and it is difficult to standardize due to the low production volume of highly specific technology application. A typical application in the MEMS process would be to conduct plating and etching (Deep RIE) through an intermediate layer of photoresist patterns, but there are cases where the photoresist itself is left therein as a permanent film. A photoresist composed of epoxy resin as the main component can form the permanent film through a catalyst of the optical cationic polymerizating initiator. In general, the optical cationic polymerizating initiator is of onium salt with antimonite as the anion group due to the nature of the hardening rate or the exposure energy. This paper presents the development status of a high sensitivity permanent photoresist made of epoxy resin as the main component with non-antimonite optical cationic polymerizating initiator with concerns to the impact to the environment and material for packaging.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Koichi Misumi, Koji Saito, Atsushi Yamanouchi, Takahiro Senzaki, Toshiki Okui, and Hideo Honma "Faster sensitivity and non-antimonite permanent photoresist for MEMS", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 61534F (29 March 2006); https://doi.org/10.1117/12.656249
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KEYWORDS
Photoresist materials

Coating

Polymers

Microelectromechanical systems

Semiconducting wafers

Argon

Epoxies

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