Evanescent wave imaging in optical lithography

Bruce W. Smith; Yongfa Fan; Jianming Zhou; Neal Lafferty; Andrew Estroff

doi:10.1117/12.657322

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15 March 2006 Evanescent wave imaging in optical lithography

Bruce W. Smith, Yongfa Fan, Jianming Zhou, Neal Lafferty, Andrew Estroff

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Proceedings Volume 6154, Optical Microlithography XIX; 61540A (2006) https://doi.org/10.1117/12.657322
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

New applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71. Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference.

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Bruce W. Smith, Yongfa Fan, Jianming Zhou, Neal Lafferty, and Andrew Estroff "Evanescent wave imaging in optical lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61540A (15 March 2006); https://doi.org/10.1117/12.657322

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