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15 March 2006 Evanescent wave imaging in optical lithography
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New applications of evanescent imaging for microlithography are introduced. The use of evanescent wave lithography (EWL) has been employed for 26nm resolution at 1.85NA using a 193nm ArF excimer laser wavelength to record images in a photoresist with a refractive index of 1.71. Additionally, a photomask enhancement effect is described using evanescent wave assist features (EWAF) to take advantage of the coupling of the evanescent energy bound at the substrate-absorber surface, enhancing the transmission of a mask opening through coupled interference.
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Bruce W. Smith, Yongfa Fan, Jianming Zhou, Neal Lafferty, and Andrew Estroff "Evanescent wave imaging in optical lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61540A (15 March 2006);

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