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15 March 2006 High NA polarized light lithography for 0.29k1 process
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Polarization is becoming very important technology in micro-lithography at the higher NA lithography for much smaller design. The wide and intensive studies to apply the polarization technology into lithography application have been achieved. Source polarization, mask polarization and projection lens polarization could make different printing results compared to non-polarization cases. Especially k1 factor below 0.3 needs aggressive resolution enhancement techniques. Environmental parameters such as mask CD, lens aberration, stray light, image plane deviation and resist characteristic make CD controllability worse in the very low k1 regime. The polarization technology can contribute to getting better imaging performance. This experiment is challenging k1 factor down to 0.29 with the source polarization function. The source polarization effect on real device will be shown through the simulation and actual printing process using 6% attenuated PSM. The related OPC strategy with the polarized source will also be discussed.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Chanha Park, Jeonkyu Lee, Kiho Yang, Shih-en Tseng, Young-Hong Min, Alek C. Chen, Hyunjo Yang, Donggyu Yim, and Jinwoong Kim "High NA polarized light lithography for 0.29k1 process", Proc. SPIE 6154, Optical Microlithography XIX, 61540F (15 March 2006);

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