15 March 2006 Alternating phase shift mask technology for 65nm logic applications
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Abstract
Alternating Phase Shift Mask (APSM) Technology has been developed and successfully implemented for the poly gate of 65nm node Logic application at Intel. This paper discusses the optimization of the mask design rules and fabrication process in order to enable high volume manufacturability. Intel's APSM technology is based on a dual sided trenched architecture. To meet the stringent OPC requirements associated with patterning of narrow gates required for the 65nm node, Chrome width between the Zero and Pi aperture need to be minimized. Additionally, APSM lithography has an inherently low MEEF that furthermore, drives a narrower Chrome line as compared to the Binary approach. The double sided trenched structure with narrow Chrome lines are mechanically vulnerable and prone to damage when exposed to conventional mask processing steps. Therefore, new processing approaches were developed to minimize the damage to the patterned mask features. For example, cleaning processes were optimized to minimize Chrome & quartz damage while retaining the cleaning effectiveness. In addition, mask design rules were developed which ensured manufacturability. The narrow Chrome regions between the zero and Pi apertures severely restrict the tolerance for the placement of the second level resists edges with respect to the first level. UV Laser Writer based resist patterning capability, capable of providing the required Overlay tolerance, was developed, An AIMS based methodology was used to optimize the undercut and minimize the aerial image CD difference between the Zero and Pi apertures.
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Kishore K. Chakravorty, Sven Henrichs, Wei Qiu, Joas L. Chavez, Yi-Ping Liu, Firoz Ghadiali, Karmen Yung, Nathan Wilcox, Mary Silva, Jian Ma, Ping Qu, Brian Irvine, Henry Yun, Wen-Hao Cheng, Jeff Farnsworth, "Alternating phase shift mask technology for 65nm logic applications", Proc. SPIE 6154, Optical Microlithography XIX, 61540M (15 March 2006); doi: 10.1117/12.654691; https://doi.org/10.1117/12.654691
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