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15 March 2006 Positive and negative tone double patterning lithography for 50nm flash memory
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Abstract
Double patterning lithography is very fascinating way of lithography which is capable of pushing down the k1 limit below 0.25. By using double patterning lithography, we can delineate the pattern beyond resolution capability. Target pattern is decomposed into patterns within resolution capability and decomposed patterns are combined together through twice lithography and twice etch processes. Two ways, negative and positive, of doing double patterning process are contrived and studied experimentally. In this paper, various issues in double patterning lithography such as pattern decomposition, resist process on patterned topography, process window of 1/4 pitch patterning, and overlay dependent CD variation are studied on positive and negative tone double patterning respectively. Among various issues about double patterning, only the overlay controllability and productivity seemed to be dominated as visible obstacles so far.
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Chang-Moon Lim, Seo-Min Kim, Young-Sun Hwang, Jae-Seung Choi, Keun-Do Ban, Sung-Yoon Cho, Jin-Ki Jung, Eung-Kil Kang, Hee-Youl Lim, Hyeong-Soo Kim, and Seung-Chan Moon "Positive and negative tone double patterning lithography for 50nm flash memory", Proc. SPIE 6154, Optical Microlithography XIX, 615410 (15 March 2006); doi: 10.1117/12.656187; https://doi.org/10.1117/12.656187
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