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21 March 2006 High transmission mask technology for 45nm node imaging
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Abstract
Today novel RET solutions are gaining more and more attention from the lithography community that is facing new challenges in attempting to meet the new requirement of the SIA roadmap. Immersion, high NA, polarization, and mask topography, are becoming common place terminology as lithographers continue to explore these areas. Here with, we compare a traditional 6% MoSi based EAPSM reticle and a high transmission solution made of a SiON/Cr film stack. Insights into the manufacturability of high transmission material are provided. Test patterns have been analyzed to determine the overall impact of imaging performance when used with immersion scanners and polarized light. Some wafer results provide reliability of simulations, which are used to make further investigation on polarization and immersion effects.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Will Conley, Nicoló Morgana, Bryan S. Kasprowicz, Mike Cangemi, Matt Lassiter, Lloyd C. Litt, Marc Cangemi, Rand Cottle, Wei Wu, Jonathan Cobb, Young-Mog Ham, Kevin Lucas, Bernie Roman, and Chris Progler "High transmission mask technology for 45nm node imaging", Proc. SPIE 6154, Optical Microlithography XIX, 615411 (21 March 2006); https://doi.org/10.1117/12.659353
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