Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation

Chi-Yuan Hung; Bin Zhang; Eric Guo; Linyong Pang; Yong Liu; Kechang Wang; Grace Dai

doi:10.1117/12.655728

15 March 2006 Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation

Chi-Yuan Hung, Bin Zhang, Eric Guo, Linyong Pang, Yong Liu, Kechang Wang, Grace Dai

Proceedings Volume 6154, Optical Microlithography XIX; 61541M (2006) https://doi.org/10.1117/12.655728
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

This paper presents the results of applying ILT to SMIC's first 65nm tape out. ILT mathematically determines the mask features that produce the desired on-wafer results for best pattern fidelity, largest process window or an desired combination of both. SMIC applied this technology to its first 65nm tape-out to study its performance and benefits for deep sub-wavelength lithography. SMIC selected 3 SRAM designs as the first set of test cases, because SRAM bit-cells contain features which are lithographically challenging. Firstly, three experiments were performed to optimize the illumination and mask design of a pair of layers by optimizing exposure energy, enabling SRAF, and enforcing mask constraints. Secondly, mask manufacturability (including fracturing and writing time) and wafer print performance of ILT was studied. Thirdly, mask patterns generated by both conventional Optical Proximity Correction (OPC) and ILT, both using only their optical models, were placed on the mask side-by-side. The results demonstrated that ILT achieved better CD accuracy and produced significantly larger process window than conventional OPC.

Citation Download Citation

Chi-Yuan Hung, Bin Zhang, Eric Guo, Linyong Pang, Yong Liu, Kechang Wang, and Grace Dai "Pushing the lithography limit: applying inverse lithography technology (ILT) at the 65nm generation", Proc. SPIE 6154, Optical Microlithography XIX, 61541M (15 March 2006); https://doi.org/10.1117/12.655728

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available