Two-beam interference of 193nm laser light can print dense line-space patterns in photoresist, down to a resolution that can only be obtained using hyper-NA scanners, and allows for early learning on hyper-NA imaging and process development. For this purpose, a dedicated two-beam interference immersion printer, operating at 193nm wavelength, was installed in the IMEC cleanroom. The interference printer consistently generates L/S patterns at 130nm, 90nm, and 72nm pitch with exposure latitudes in the 12-26% range (when using TE-polarized light). At these pitches, process and imaging issues have been studied that are of direct interest for hyper-NA lithography. On the imaging side, we discuss the flexibility of the printer towards working with various polarizations. We show how reflection reduction strategies at the high incidence angles of hyper-NA imaging can be tested in the interference printer. On the processing side, we have screened a number of resists at 90nm pitch. A methodology to study static and dynamic leaching was developed. Several liquids with refractive index >1.6 are currently being developed as potential candidates to replace water for optical lithography at 38nm half-pitch. We have used the interference printer at 72nm pitch, with both water and liquids of refractive index 1.65.