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21 March 2006 Liquid immersion lithography at 193 nm using a high-NA achromatic interferometer
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Abstract
In this paper, we present an immersion interferometer specially designed to be used with a commercial ArF excimer laser. Different configurations are presented enabling the printing of dense lines with a pitch down to 65 nm with an acceptable depth-of-focus. Photoresist patterns are shown at a half-pitch down to 40 nm with nice squared profiles. First polarization studies at high-numerical aperture (NA) have been performed and we noticed a good correlation between roughness and polarization variation at high NA.
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Anne-Laure Charley, Alexandre Lagrange, Olivier Lartigue, Philippe Bandelier, Marianne Derouard, and Patrick Schiavone "Liquid immersion lithography at 193 nm using a high-NA achromatic interferometer", Proc. SPIE 6154, Optical Microlithography XIX, 61541Z (21 March 2006); https://doi.org/10.1117/12.654404
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