A novel RET, "Super Diffraction Lithography" (SDL), which enable 70 nm any pitch line by single exposure in KrF wavelength, has been studied in order to apply for an actual device pattern formation. In a previous work, the concept of SDL has been described with optical image calculations for 1-dimensional patterns and very superior performance has been proved. In this work, imaging characteristics and printing performance of typical 2-dimension patterns are investigated by optical image calculations and printing experiments to realize an application of SDL technique to fabrication of actual device patterns. As a result, very good performance is achieved for the typical 2-dimentional patterns such as line-end, tee-branch. Moreover, good performance is obtained for general SRAM patterns and standard cell of 65 nm node logic device with a little relaxation of design rule. In conclusion, by the application of SDL, 65 nm SoC patterns with a little relaxed design can be formed by single exposure process in KrF wavelength with a simple Atten-PSM. Then, huge cost reduction can be expected by application of SDL.