21 March 2006 Simulation of mask induced polarization effect on imaging in immersion lithography
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The minimum feature size of the semiconductor device will be smaller and smaller because of the increasing demand for the high integration of the device. According to recently proposed roadmap, ArF immersion lithography will be used for 65 nm to 45 nm technology nodes. Polarization effect becomes a more important factor due to the increasing demand for high NA optical system and the use of immersion lithography. It is important to know that the polarization effect is induced by mask in small size patterning. The unpolarized plane waves leaving the illumination system are diffracted by the mask. So the light beam going through the mask will experience induced polarization by the mask. In this paper, we considered the change of polarization state as a function of mask properties. We calculated vector diffraction of 193 nm incident light. The masks considered are the chromeless mask, a binary chrome mask and 6 % attenuated phase shifting mask. We use the finite-difference time-domain method to solve the Maxwell equation. The aerial image depends on the polarization states induced by the mask properties such as materials, thickness, and pitch.
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Eun-A Kwak, Eun-A Kwak, Mi-Rim Jung, Mi-Rim Jung, Dai-Gyoung Kim, Dai-Gyoung Kim, Ji-Eun Lee, Ji-Eun Lee, Hye-Keun Oh, Hye-Keun Oh, Sook Lee, Sook Lee, } "Simulation of mask induced polarization effect on imaging in immersion lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61542T (21 March 2006); doi: 10.1117/12.656204; https://doi.org/10.1117/12.656204

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