20 March 2006 Methods for benchmarking photolithography simulators: part IV
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In a previous series of papers, we proposed benchmarks for lithography simulators drawn from the optics literature for aerial image, optical film-stack calculations, and mask topography effects. We extend this work and present benchmarks for PEB and resist development. These benchmarks can easily be applied to any lithography simulator that models these lithographic effects.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Trey Graves, Trey Graves, Mark D. Smith, Mark D. Smith, Chris A. Mack, Chris A. Mack, } "Methods for benchmarking photolithography simulators: part IV", Proc. SPIE 6154, Optical Microlithography XIX, 61542X (20 March 2006); doi: 10.1117/12.660031; https://doi.org/10.1117/12.660031

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