Verifying high NA polarization OPC treatment on wafer

Ralph E. Schlief; Mario Hennig; Rainer Pforr; Jörg Thiele; Max Hoepfl

doi:10.1117/12.656621

20 March 2006 Verifying high NA polarization OPC treatment on wafer

Ralph E. Schlief, Mario Hennig, Rainer Pforr, Jörg Thiele, Max Hoepfl

Proceedings Volume 6154, Optical Microlithography XIX; 61543F (2006) https://doi.org/10.1117/12.656621
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

High NA scanners with adjustable polarization are becoming commercially available. Linear polarization has been shown to significantly improve imaging performance of preferentially oriented lines. Azimuthal and tangential polarization are now becoming commercially available. The latter has less asymmetry in its imaging and can resolve critical features oriented in multiple directions at the same time. Linear y-oriented or vertical polarization was used, since at the time of this work, azimuthal and tangential polarization were not available. Such x- and y-oriented linear polarization could be used in double exposure imaging, for example. Just as for unpolarized imaging, OPC models are required for polarized imaging that are accurate in (a) fitting and predicting experimental CD values, (b) fragmenting layout, and (c) correcting the fragmented layout to target. This paper describes the results of such a first OPC verification loop. Experimental proximity data in X- and Y-orientation were measured. Source polarization and wafer stack thin film effects were included in the empirically fit OPC simulation model. A parallel investigation was undertaken using an unpolarized source. It served as the reference case. Simple test patterns as well product-like 2D layout was treated with the vertically polarized and unpolarized OPC models. A test mask was written and wafer printing results obtained. They demonstrated the validity of the approach and pointed to further OPC model improvements.

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Ralph E. Schlief, Mario Hennig, Rainer Pforr, Jörg Thiele, and Max Hoepfl "Verifying high NA polarization OPC treatment on wafer", Proc. SPIE 6154, Optical Microlithography XIX, 61543F (20 March 2006); https://doi.org/10.1117/12.656621

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KEYWORDS

Optical proximity correction

Polarization

Data modeling

Scanners

SRAF

Photomasks

Semiconducting wafers

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