20 March 2006 Mask process variation induced OPC accuracy in sub-90nm technology node
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Abstract
Since an OPC engine makes model to fit wafer printed CD of OPC test mask to simulation CD of test pattern layout, the target CD of OPCed mask is not design CD but the CD of OPC test mask. So, the CD difference between OPC test mask and OPCed mask is one of the most important error source of OPC. We experimentally obtained OPC CD error of several patterns such as iso line, iso space, dense line, line end, effected by the mask MTT (mean to target) difference of the two masks on of 90nm logic pattern with an ArF attenuated mask having designed different MTT. The error is compared to simulated data that is calculated with MEEF (mask error enhancement factor) and EL (exposure latitude) data of these patterns. The good agreement of the experimental and calculated OPC error effected mask MTT error can make OPC error are predicted by mask CD error. Using by these calculation, we made mask CD window to meet OPC spec for 90nm ArF process.
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Se-Jin Park, Se-Jin Park, Yeon-Ah Shim, Yeon-Ah Shim, Jae-Hyun Kang, Jae-Hyun Kang, Jae-Young Choi, Jae-Young Choi, Kyung-Hee Yoon, Kyung-Hee Yoon, Yong-Suk Lee, Yong-Suk Lee, Keeho Kim, Keeho Kim, } "Mask process variation induced OPC accuracy in sub-90nm technology node", Proc. SPIE 6154, Optical Microlithography XIX, 61543K (20 March 2006); doi: 10.1117/12.657036; https://doi.org/10.1117/12.657036
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