Full-field exposure tools for ArF immersion lithography

Jeung-woo Lee; Akihiko Otoguro; Toshiro Itani; Kiyoshi Fujii; Ken-ichi Shiraishi; Tomoharu Fujiwara; Yuki Ishii

doi:10.1117/12.656130

21 March 2006 Full-field exposure tools for ArF immersion lithography

Jeung-woo Lee, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii, Ken-ichi Shiraishi, Tomoharu Fujiwara, Yuki Ishii

Proceedings Volume 6154, Optical Microlithography XIX; 61544I (2006) https://doi.org/10.1117/12.656130
Event: SPIE 31st International Symposium on Advanced Lithography, 2006, San Jose, California, United States

Abstract

Immersion lithography has by far satisfied most expectations regarding its feasibility as the next lithographic technique for the 65-nm node and below. To further advance 193-nm immersion lithography, a means of efficiently controlling water as an immersion fluid and research and development concerning resist processes are necessary. In 2004, Nikon Corporation introduced a 0.85 numerical aperture (NA) 193-nm immersion exposure tool that uses water as the immersion liquid. This engineering evaluation tool (EET) is equipped with a highly efficient temperaturestabilized water nozzle assembly. Selete Inc. in collaboration with Nikon Corporation has been evaluating the performance and various characteristics of the EET while also investigating various photoresist and topcoat processes. We selected three types of standard immersion processes that offered the best performance for our evaluation purposes. A resolution limit of 70-nm half-pitch line-and-space (L/S) patterns has been confirmed. A 0.8-μm depth of focus (DOF) was also verified for an 80-nm half-pitch L/S pattern. In addition, full wafer (WF) critical dimension (CD) uniformity of less than 5 nm (3 sigma) has been demonstrated for a 90-nm half-pitch L/S pattern on a 300-mm wafer (WF). After the implementation of various improvements to both the EET and the topcoat/resist processes, we have achieved a total defect density of 0.23/cm², and this defect level is low enough for pilot production.

Citation Download Citation

Jeung-woo Lee, Akihiko Otoguro, Toshiro Itani, Kiyoshi Fujii, Ken-ichi Shiraishi, Tomoharu Fujiwara, and Yuki Ishii "Full-field exposure tools for ArF immersion lithography", Proc. SPIE 6154, Optical Microlithography XIX, 61544I (21 March 2006); https://doi.org/10.1117/12.656130

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available