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10 March 2006 Process influence study on optical model generation during model-based OPC development
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Optical & process model are used in conjunction with Mentors Calibre OPC tool to predict the behavior of a lithography process. Resist models rely exclusively on empirical measurement data, while optical models are calibrated based on the users knowledge of tool settings, but also fitting unknown parameters to empirical measurements. The final OPC model is a combination of optical & process behaviors prediction which includes resist & other process influence to meet the ever increasing demand of advanced lithography technology nodes like 90nm & below on model accuracy. Reliance of optical model creation on empirical measurement data is undoubtedly raising suspicion of how well the derived diffraction model is able to provide an accurate description of how light energy is distributed inside the resist. Various work & effort had been conducted in the past to cover defocus phenomenal on final model outcome & methodology introduced on better prediction from defocus to achieve better simulation quality, investigation has been carried out to study in further detail of existing strategy of resist & optical decoupling methodology in this work.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
ChinTeong Lim, Vlad Temchenko, Woong-Jae Chung, Dave Wallis, Robert Wildfeuer, Uta Mierau, Sebastian Schmidt, and Martin Niehoff "Process influence study on optical model generation during model-based OPC development", Proc. SPIE 6155, Data Analysis and Modeling for Process Control III, 615503 (10 March 2006);

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